Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals
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چکیده
منابع مشابه
Reduced electrical impedance of SiO2, deposited through focused ion beam based systems, due to impurity percolation
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Focused ion beam induced deposition: fabrication of three-dimensional microstructures and Young’s modulus of the deposited material
In this work, some of the possibilities of focused ion beams for applications in microsystem technology are explored. Unlike most previous studies, the emphasis is on ‘additive’ techniques, i.e. localized maskless deposition of metals and insulators. More precisely, we will show the possibility of fabricating small three-dimensional structures, using focused ion beam deposition of silicon oxide...
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تاریخ انتشار 2015